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Technical parameters

Key specs

TypePNP
Collector-emitter voltage-60 V
Collector current-1 AMax
DC current gain63 ~ 250Max 250 (VCE = -2 V,IC = -150 mA)
Power500 mWMax · Max 0.5 W (Tamb ≤ 25 °C,Max 0.9 W (Tamb ≤ 25 °C,Max 1.3 W (Tamb ≤ 25 °C

Datasheet-verified parameters

15 items
ParameterValue and test conditionsSource
TypePNP medium power transistor
Collector-emitter voltageMax -60 V (open base)
Collector currentMax -1 A
DC current gainMin 63, Max 250 (VCE = -2 V; IC = -150 mA)
Total power dissipationMax 0.5 W (Tamb ≤ 25 °C, FR4 PCB standard footprint); Max 0.9 W (Tamb ≤ 25 °C, mounting pad 1 cm²); Max 1.3 W (Tamb ≤ 25 °C, mounting pad 6 cm²)
PackageSOT89 (SC-62/TO-243)
Ambient temperatureMin -65 °C, Max +150 °C
Junction temperatureMax 150 °C
Storage temperatureMin -65 °C, Max +150 °C
Collector-base voltageMax -60 V (open emitter)
Emitter-base voltageMax -5 V (open collector)
Peak collector currentMax -1.5 A (single pulse; tp ≤ 1 ms)
Peak base currentMax -0.2 A (single pulse; tp ≤ 1 ms)
Thermal resistance from junction to ambientMax 230 K/W (in free air, standard footprint); Max 135 K/W (mounting pad 1 cm²); Max 95 K/W (mounting pad 6 cm²)
Thermal resistance from junction to solder pointMax 20 K/W

Pinout and package

PackageSOT89 (SC-62/TO-243)

PinNameFunctionSource
1Emitter
2Collector
3Base

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.