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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage45 V
Collector current200 mAMax
DC current gain2502mA
Power350 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)200 mA
Power - Max350 mW
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2mA, 5V
Frequency - Transition125MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSST3
Other
Base Product NumberBCX70
MfrRohm Semiconductor
Product StatusNot For New Designs
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic550mV @ 1.25mA, 50mA

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