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HomeSingle Bipolar TransistorsCentral Semiconductor CorpBCY70
BCY70
Central Semiconductor CorpUnited States

BCY70

Single Bipolar Transistors
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Technical parameters

Power
IC-最大集电极电流0.2A
VCEO-集射级击穿电压40V
AC and DC characteristics
fT-变换频率250MHZ
hFE-最小直流增益15
Environment and package
封装类型1BCY
最大工作温度200℃
Other
Pd-功率耗散0.35W
VCE(sat)-集射级饱和压降0.25V
引脚数量13

Documents

DatasheetDatasheet · 268.8 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 4.4 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 3.2 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.9 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 467.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 172.4 KB · 2026-09-22EnvironmentalEnvironmental · 106.6 KB · 2026-09-22
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