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NXP SemiconductorsNetherlands
JFET N-CH 20V 30mA SOT23
NXP BF511 N-channel silicon JFET in SOT23 package, VDS max 20V, ID max 30mA, suitable for car radio RF stages, featuring low feedback capacitance and low noise figure.Checked against the datasheet
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Technical parameters
Datasheet-verified parameters
9 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Package | SOT23 | |
| Storage temperature range | -65 to +150 °C | |
| Junction temperature | max. 150 °C | |
| Drain-source voltage | max. 20 V | |
| Drain-gate voltage (open source) | max. 20 V | |
| Drain current (DC or average) | max. 30 mA |
All parameters (9)
| Power | |
|---|---|
| Drain current (DC or average) | 30 mA (Max) |
| Drain current I_DSS | 2.5 mA (Min) |
| Drain-source voltage | 20 V (Max) |
| Total power dissipation up to T_amb = 40°C | 250 mW (Max) |
| AC and DC characteristics | |
| Noise figure F | 1.5 dB (Typ) |
| Environment and package | |
| Package | SOT23 |
| Storage temperature range | -65 to +150 °C |
| Other | |
| Feedback capacitance C_rs | 0.3 pF (Typ) |
| Transfer admittance |y_fs| | 4 mS (Min) |
Pinout and package
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| Pin | Name | Function | Source |
|---|---|---|---|
| 1 | Gate | ||
| 2 | Drain | ||
| 3 | Source |
Documents
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