Plastic surface-mounted packag…

BFU530AR

Bipolar RF Transistorsplastic surface-mounted package

TRANSISTOR BJT NPN 24V 40MA SOT23

NXP BFU530A NPN silicon RF transistor in SOT23 package, suitable for low-noise applications up to 2 GHz, AEC-Q101 qualified, max collector current 40 mA.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

16 items

Parameter	Value and test conditions	Source
Package	plastic surface-mounted package; 3 leads SOT23
Junction temperature	Min -40 °C, Max +150 °C
Grade	AEC-Q101 qualified
Collector-base voltage	Max 24 V (open emitter)
Collector-emitter voltage	Max 12 V (open base), Max 24 V (shorted base)
Emitter-base voltage	Max 2 V (open collector)
Collector current	Max 40 mA
Total power dissipation	Max 450 mW (Tsp ≤ 87 °C)
DC current gain	Min 60, Typ 95, Max 200 (IC = 10 mA; VCE = 8 V)
Collector capacitance	Typ 0.67 pF (VCB = 8 V; f = 1 MHz)
Transition frequency	Typ 11 GHz (IC = 15 mA; VCE = 8 V; f = 900 MHz)
Maximum power gain	Typ 18 dB (IC = 10 mA; VCE = 8 V; f = 900 MHz)
Minimum noise figure	Typ 0.6 dB (IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt)
Output power at 1 dB gain compression	Typ 10 dBm (IC = 15 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900 MHz)
Storage temperature	Min -65 °C, Max +150 °C
Electrostatic discharge voltage	Max ±150 V (HBM), Max ±2 kV (CDM)

All parameters (9)ExpandCollapse

Environment and package
Package	SOT23
Other
f_T	11 GHz (Typ)
h_FE	95 (Typ)
I_C	40 mA (Max)
NF_min	0.6 dB (Typ)
P_tot	450 mW (Max)
T_j	-40 °C to +150 °C
V_CB	24 V (Max)
V_CE	12 V (Max)

Pinout and package

Packageplastic surface-mounted package; 3 leads SOT23

Pin	Name	Function	Source
1		Base
2		Emitter
3		Collector

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DatasheetDatasheet · 307.5 KB · 2026-10-29

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