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Technical parameters

Power
Current - Collector (Ic) (Max)25mA
Power - Max200mW
Voltage - Collector Emitter Breakdown (Max)15V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 25mA, 1V
Frequency - Transition1.4GHz
Gain23dB
Noise Figure (dB Typ @ f)5.5dB @ 800MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
PackageBulk
Package / CaseTO-206AF, TO-72-4 Metal Can
Supplier Device PackageTO-72
Other
Base Product NumberBFY90
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN

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