BL(上海贝岭)China
BL11N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO220 TO220F TO251 TO252 |
| Other | |
| ID(Max.) | 11A |
| Mode | N-Channel |
| Qg(Typ) | 23nC |
| RDS(on)(Max.) | 450mΩ |
| Type | Planar MOSFETs |
| VDS(Max.) | 400V |
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