Infineon TechnologiesGermany
BSP317P H6327
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage250 V
Continuous drain current430 mA
| Power | |
|---|---|
| 漏源电压(Vdss) | 250V |
| 连续漏极电流(Id) | 430mA |
| Other | |
| 数量 | 1个P沟道 |
| 耗散功率(Pd) | 1.8W |