Infineon TechnologiesGermany
BSR202N L6327
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| Environment and package | |
| 工作温度 | -55℃~+150℃ |
| Other | |
| 数量 | 1个N沟道 |
| 耗散功率(Pd) | 500mW |