HUXN(慧芯)China
MOSFETs · 小信号MOSFETs
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View full reportTechnical parameters
| Power | |
|---|---|
| Channel | N |
| Environment and package | |
| 封装 | SOT-323 |
| Other | |
| ESD | Y |
| ID(A) | 0.32 |
| RDS(on) Max @VGS=10V (mΩ) | 1600 |
| RDS(on) Max @VGS=4.5V (mΩ) | 2200 |
| VDS(V) | 60 |
| VGS(th)(V) | 0.48-1.6 |
| VGS(V) | ±20 |