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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage50 V
Continuous drain current130 mA
On-resistance10 ΩMax · 100mA
Gate threshold voltage2 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C130mA (Ta)
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)5V
Power Dissipation (Max)300mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds45 pF @ 25 V
MfrUMW
Product StatusActive
Rds On (Max) @ Id, Vgs10Ohm @ 100mA, 5V
SeriesUMW
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1mA

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