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Technical parameters

Datasheet-verified parameters

22 items
ParameterValue and test conditionsSource
PackageISOWATT218
Max. Operating Junction Temperature175 °C
Storage Temperature-65 to 175 °C
Collector-Emitter Voltage (VBE=0)500 V
Collector-Emitter Voltage (IB=0)400 V
Emitter-Base Voltage (IC=0)5 V
Collector Current15 A
Collector Peak Current30 A
Base Current1 A
Base Peak Current5 A
Total Dissipation at Tc=25°C65 W
Collector Cut-off Current (VBE=0)Max 100 μA (VCE=500 V, Tj=25°C); Max 0.5 mA (VCE=500 V, Tj=125°C)
Collector Cut-off Current (IB=0)Max 100 μA (VCE=450 V, Tj=25°C); Max 0.5 mA (VCE=450 V, Tj=125°C)
Emitter Cut-off Current (IC=0)Max 20 mA (VEB=5 V)
Collector-Emitter Sustaining Voltage (IB=0)Min 400 V (IC=100 mA, L=10 mH, VClamp=400 V)
Collector-Emitter Saturation VoltageMax 1.6 V (IC=8 A, IB=100 mA); Max 1.8 V (IC=10 A, IB=250 mA); Max 2 V (IC=12 A, IB=300 mA)
Base-Emitter Saturation VoltageMax 2.2 V (IC=8 A, IB=100 mA); Max 2.5 V (IC=10 A, IB=250 mA); Max 2.7 V (IC=12 A, IB=300 mA)
DC Current GainMin 300 (IC=5 A, VCE=10 V)
Diode Forward VoltageMax 2.5 V (IF=10 A)
Functional Test CurrentMin 10 A (VCC=24 V, VClamp=400 V, VL=7 mH)
Inductive Load Storage TimeTyp 15 μs (VCC=12 V, VClamp=300 V, L=7 mH, IC=7 A)
Inductive Load Fall TimeTyp 0.5 μs (VCC=12 V, VClamp=300 V, L=7 mH, IC=7 A)
All parameters (8)ExpandCollapse
Environment and package
PackageISOWATT218
Rthj-case2.3 °C/W (Max)
Other
IC15 A
ICM30 A
Ptot65 W
Tj175 °C
Tstg-65 to 175 °C
VCEO400 V

Pinout and package

PackageISOWATT218

PinNameFunctionSource
1Base
2Emitter
3Collector

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.