Vishay General Semiconductor - Diodes DivisionUnited States
DIODE AVALANCHE 1KV 3A SOD64
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View full reportTechnical parameters
Key specs
Reverse voltage1 kV
Average rectified current3 A
Forward voltage1.4 VMax · 3 A
TypeFast recoveryFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 3 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Package / Case | SOD-64, Axial |
| Supplier Device Package | SOD-64 |
| Other | |
| Base Product Number | BYT56 |
| Capacitance @ Vr, F | - |
| Diode Type | Avalanche |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Active |
| Reverse Recovery Time (trr) | 100 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |