BORN(伯恩半导体)China

BZT52B9V1

ActiveSwitching Diodes
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Technical parameters

IZT(mA)5
P.D.(W)0.5
VZ (Max.)@IZT (V)9.28
VZ (Min.)@IZT (V)8.92
VZ (Nom.)@IZT (V)9.1

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DatasheetDatasheet · 1.4 MB · 2026-09-23
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