Central Semiconductor CorpUnited States
MOSFET N-CH 600V 4A DPAK
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current4 A
On-resistance950 mΩMax · 2A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 38W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
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