VBsemi(微碧半导体)China
CEU6426-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,60V；45A；RDS(ON)=25mΩ@VGS=10V,VGS=20V；Vth=1~3V；
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current45 A
On-resistance25 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 45A |
| Other | |
| 导通电阻(RDS(on)) | 25mΩ@10V |
| 耗散功率(Pd) | 3W |