MACOM Technology SolutionsUnited States

CGH40010P

RF AmplifiersPill

RF MOSFET HEMT 28V 12.5W 440196

MACOM CGH40010P is a 10W, DC-6GHz GaN HEMT RF power amplifier in a Pill package, operating at 28V, suitable for broadband linear and compressed amplifier circuits.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

24 items
ParameterValue and test conditionsSource
PackagePill (Solder-down)
Case Operating Temperature-40, +150 °C
Storage Temperature-65, +150 °C
Operating Junction Temperature225 °C
Drain-Source Voltage120 V (Max), 25°C
Gate-to-Source Voltage-10, +2 V (Max), 25°C
Maximum Drain Current1.5 A (Max), 25°C
Maximum Forward Gate Current4.0 mA (Max), 25°C
Gate Threshold VoltageMin -3.8 V, Typ -3.0 V, Max -2.3 V; VDS=10V, ID=3.6mA
Gate Quiescent VoltageTyp -2.7 V; VDS=28V, ID=200mA
Saturated Drain CurrentMin 2.9 A, Typ 3.5 A; VDS=6.0V, VGS=2.0V
Drain-Source Breakdown VoltageMin 84 V; VGS=-8V, ID=3.6mA
Small Signal GainMin 12.5 dB, Typ 14.5 dB; VDD=28V, IDQ=200mA, 3.7GHz
Power OutputMin 10 W, Typ 12.5 W; VDD=28V, IDQ=200mA
Drain EfficiencyMin 55 %, Typ 65 %; VDD=28V, IDQ=200mA, PSAT
Output Mismatch StressMax 10:1 VSWR; VDD=28V, IDQ=200mA, POUT=10W CW
Input CapacitanceTyp 4.5 pF; VDS=28V, VGS=-8V, f=1MHz
Output CapacitanceTyp 1.3 pF; VDS=28V, VGS=-8V, f=1MHz
Feedback CapacitanceTyp 0.2 pF; VDS=28V, VGS=-8V, f=1MHz
Thermal Resistance, Junction to Case8.0 °C/W; 85°C
Soldering Temperature245 °C
Screw Torque40 in-oz
Recommended Operating Voltage28 V
Frequency RangeDC - 6 GHz
All parameters (8)ExpandCollapse
Power
Current - Test200 mA
Power - Output12.5W
Voltage - Rated28 V
AC and DC characteristics
Frequency0Hz ~ 6GHz
Gain14.5dB
Environment and package
Package / Case440196
Other
SeriesGaN
TechnologyHEMT

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