晶导微电子China
连接漏极电流(Id)(25℃时):10A,漏源电压(Vdss):650V,N沟道,应用于高频开关电源、电子镇流器
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View full reportTechnical parameters
Key specs
Drain-source voltage650 V
Continuous drain current10 A
On-resistance700 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 10A |
| Other | |
| 导通电阻(RDS(on)) | 700mΩ@10V |
| 耗散功率(Pd) | 55W |