Applied Power(应能微)China
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOT-23 |
| Other | |
| Configuration | Single |
| ID(A) | 4.7 |
| N/P | N |
| Plateform | Trench MOSFET |
| Rdson @VGS10V Max(mΩ) | 39 |
| Rdson @VGS10V Typ(mΩ) | 34 |
| Rdson @VGS4.5V Max(mΩ) | 52 |
| Rdson @VGS4.5V Typ(mΩ) | 45 |
| VDSS(V) | 30 |
| VGS(th) Max | 2.2 |
| VGS(th) Min | 1 |
| VGS(V) | ±20 |