Central Semiconductor CorpUnited States
RF TRANSISTOR TO-39
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 1W |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 2V |
| Frequency - Transition | 1.3GHz |
| Gain | - |
| Noise Figure (dB Typ @ f) | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~200°C(TJ) |
| Package | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Other | |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP |
Documents
DatasheetDatasheet · 540.6 KB · 2026-09-22DatasheetDatasheet · 221.4 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 4.4 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 3.2 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.9 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22OtherOther · 491.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 297.5 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 170.3 KB · 2026-09-22EnvironmentalEnvironmental · 106.0 KB · 2026-09-22PCN & ErrataPCN & Errata · 80.8 KB · 2026-09-22
Open document center