Central Semiconductor CorpUnited States
MOSFET N/P-CH 20V SOT563
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 540mA, 430mA |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 350mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Other | |
| Base Product Number | CMLDM3757 |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.58nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 16V |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 540mA, 4.5V |
| Series | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
Documents
No documents are linked to this part yet.