Central Semiconductor CorpUnited States
MOSFET P-CH 20V 860MA SOT563
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current860 mA
On-resistance150 mΩMax · 950mA
Gate threshold voltage1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 350mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Other | |
| Base Product Number | CMLDM8120 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.56 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 16 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |