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Technical parameters

Environment and package
PackagePDFN3.3x3.3
Other
ConfigurationDual
ID(A)32
N/PN
PlateformTrench MOSFET
Rdson @VGS10V Max(mΩ)12
Rdson @VGS10V Typ(mΩ)9
Rdson @VGS4.5V Max(mΩ)17
Rdson @VGS4.5V Typ(mΩ)12
VDSS(V)30
VGS(th) Max3
VGS(th) Min1
VGS(V)±20

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