Central Semiconductor CorpUnited States
MOSFET N-CH 60V 280MA SOT23
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current280 mA
On-resistance2 ΩMax · 500mA
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Power Dissipation (Max) | 350mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package | Box |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| Base Product Number | CMPDM7002 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 40V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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