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Technical parameters

Power
ID-最大漏极电流25A
Id-额定电流25A
VDSS-最大漏源电压60V
Vgs(th)-门槛电压2V
AC and DC characteristics
RDS(on)-漏源导通阻抗29mΩ
Ron-最大导通阻抗29mΩ
Environment and package
封装类型1TO251
Other
Ciss-输入电容939pF
Ciss-输入等效电容939pF
Qg-栅极电荷21.2nC
Vdss-漏源耐压60V
内置ESD保护二极管0
内置整流二极管0
引脚数量13
集成ESD保护二极管0
集成整流二极管0

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