Texas InstrumentsUnited States
MOSFET 2P-CH 20V 1.2A 6DSBGA
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Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 750mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 6-UFBGA, DSBGA |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Other | |
| Base Product Number | CSD75205 |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 10V |
| Mfr | Texas Instruments |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 4.5V |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |