Texas InstrumentsUnited States
MOSFET 2P-CH 3.9A 9DSBGA
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.9A |
| Drain to Source Voltage (Vdss) | - |
| Power - Max | 700mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 9-UFBGA, DSBGA |
| Supplier Device Package | 9-DSBGA |
| Other | |
| Base Product Number | CSD75207 |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) Common Source |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 10V |
| Mfr | Texas Instruments |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 162mOhm @ 1A, 1.8V |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |