Texas InstrumentsUnited States
MOSFET 2N-CH
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | - |
| Drain to Source Voltage (Vdss) | - |
| Power - Max | 1.7W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 4-XFLGA |
| Supplier Device Package | 4-Picostar (1.31x1.31) |
| Other | |
| Base Product Number | CSD85302 |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Mfr | Texas Instruments |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | - |
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