Texas InstrumentsUnited States
MOSFET 2N-CH 25V 50A 8SON
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Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Drain to Source Voltage (Vdss) | 25V |
| Power - Max | 13W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | 8-LSON (5x6) |
| Other | |
| Base Product Number | CSD86360Q5 |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 12.5 |
| Mfr | Texas Instruments |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |