VBsemi(微碧半导体)China
CSD87502Q2T-VB
Transistors - FETs, MOSFETs - SingleN+N沟道；电压：30V；电流：5.8A；导通电阻：22(mΩ)
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Key specs
Drain-source voltage30 V
Continuous drain current5.8 A
On-resistance26 mΩMax · 4.5V，10V
Gate threshold voltage2.5 VMax
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 5.8A |
| 阈值电压(Vgs(th)) | 2.5V |
| Other | |
| 导通电阻(RDS(on)) | 26mΩ@4.5V；22mΩ@10V |