CSD87503Q3ET
Texas InstrumentsUnited States

CSD87503Q3ET

ActiveTransistors - FETs, MOSFETs - Arrays

30-V DUAL N-CHANNEL MOSFET, COMM

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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max15.6W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device Package8-VSON (3.3x3.3)
Other
Base Product NumberCSD87503
FET FeatureStandard
FET Type2 N-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1020pF @ 15V
MfrTexas Instruments
Product StatusActive
Rds On (Max) @ Id, Vgs-
SeriesNexFET™
Vgs(th) (Max) @ Id2.1V @ 250µA

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