Central Semiconductor CorpUnited States
MOSFET DUAL N-CHANNEL
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 1.65W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | 8-TDFN Exposed Pad |
| Supplier Device Package | TLM832DS |
| Other | |
| FET Feature | Standard |
| FET Type | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 3.56nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 16V |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V |
| Series | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
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