CUS03

Toshiba CUS03 Schottky Barrier Diode, 40V/0.7A, US-FLAT package, suitable for SMPS and portable equipment.Checked against the datasheet

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Reverse voltage40 V

Average rectified current700 mA0.7 A (Note 1: Ta = 53°C，Rectangular waveform α = 180°，VR = 20 V)

Forward voltage520 mVMax · Max. 0.52 V (Test Condition: IFM=0.7 A

TypeSchottky

13 items

Parameter	Value and test conditions	Source
Repetitive peak reverse voltage	40 V
Average forward current	0.7 A (Note 1: Ta = 53°C, Device mounted on a glass-epoxy board 50 mm × 50 mm, Soldering land size 6 mm × 6 mm, Rectangular waveform α = 180°, VR = 20 V)
Peak forward voltage	Typ. 0.48 V, Max. 0.52 V (Test Condition: IFM=0.7 A, pulse test)
Diode type	Schottky Barrier Diode
Package	US-FLAT
Junction temperature	-40 to 150 °C
Storage temperature range	-40 to 150 °C
Non-repetitive peak forward surge current	20 A (50 Hz)
Repetitive peak reverse current	Typ. 3.0 μA, Max. 100 μA (Test Condition: VRRM=40 V, pulse test)
Junction capacitance	Typ. 45 pF (Test Condition: VR=10 V, f=1.0 MHz)
Thermal resistance (junction to ambient)	Max. 150 °C/W (Device mounted on a glass-epoxy board 50 mm × 50 mm, soldering land size 6 mm × 6 mm, board thickness 1.6 mm)
Thermal resistance (junction to lead)	Max. 30 °C/W (Junction to lead of cathode side)
Recommended operating conditions	Worst-case current ≤ 80% of IF(AV) absolute max rating, Tj < 120°C

PackageUS-FLAT

Pin	Name	Function	Source
1		ANODE
2		CATHODE

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