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View full reportTechnical parameters
| Power | |
|---|---|
| 栅极阈值电压 | 1.11V~2.5V |
| 漏源击穿电压 | 最小60.1V |
| Environment and package | |
| 封装形式 | TO252 |
| 温度范围 | -40℃~175℃ |
| Other | |
| 功能描述 | 先进的沟槽技术和设计，提供出色的RDS和低栅极电荷 |
| 漏源导通电阻 | 11~20mΩ |
Documents
No documents are linked to this part yet.
| Power | |
|---|---|
| 栅极阈值电压 | 1.11V~2.5V |
| 漏源击穿电压 | 最小60.1V |
| Environment and package | |
| 封装形式 | TO252 |
| 温度范围 | -40℃~175℃ |
| Other | |
| 功能描述 | 先进的沟槽技术和设计，提供出色的RDS和低栅极电荷 |
| 漏源导通电阻 | 11~20mΩ |
No documents are linked to this part yet.