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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage-20 VTest Condition: VGS=0V,ID=-250μA
Continuous drain current4.2 A
On-resistance60 mΩMax · Test Condition: VGS=-4.5V,ID=-4.2A
Gate threshold voltage-900 mVMax · Test Condition: VDS=VGS,ID=-250μA

Datasheet-verified parameters

19 items
ParameterValue and test conditionsSource
ChannelP-CHANNEL
Drain-Source Breakdown VoltageMin: -20 V, Test Condition: VGS=0V, ID=-250μA
Static Drain-Source On-ResistanceTyp: 45 mΩ, Max: 60 mΩ, Test Condition: VGS=-4.5V, ID=-4.2A
Gate Threshold VoltageMin: -0.5 V, Max: -0.9 V, Test Condition: VDS=VGS, ID=-250μA
PackageSOT23 (Standard)
QualificationAutomotive (AEC-Q101 qualified)
RoHS CompliantFully RoHS Compliant
Halogen FreeHalogen and Antimony Free. “Green” Device
Zero Gate Voltage Drain CurrentMax: -1.0 μA, Test Condition: VDS=-20V, VGS=0V, TJ=+25°C
Gate-Source LeakageMax: ±100 nA, Test Condition: VGS=±8V, VDS=0V
Forward Transfer AdmittanceTyp: 9 S, Test Condition: VDS=-5V, ID=-4A
Input CapacitanceTyp: 727 pF, Test Condition: VDS=-20V, VGS=0V, f=1.0MHz
Output CapacitanceTyp: 69 pF, Test Condition: VDS=-20V, VGS=0V, f=1.0MHz
Reverse Transfer CapacitanceTyp: 64 pF, Test Condition: VDS=-20V, VGS=0V, f=1.0MHz
Gate ResistanceTyp: 23 Ω, Test Condition: VGS=0V, VDS=0V, f=1.0MHz
Total Gate ChargeTyp: 7.6 nC, Test Condition: VGS=-4.5V, VDS=-4V, ID=-3.5A
Turn-On Delay TimeTyp: 14.0 ns, Test Condition: VDS=-4V, VGS=-4.5V, RL=4Ω, RG=6Ω, ID=-1A
Turn-Off Delay TimeTyp: 53.8 ns, Test Condition: VDS=-4V, VGS=-4.5V, RL=4Ω, RG=6Ω, ID=-1A
PackingTape & Reel, Qty: 3000
All parameters (23)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)1.4W
Environment and package
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
QualificationAEC-Q101
Supplier Device PackageSOT-23-3
Other
Base Product NumberDMP2305
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs7.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds727 pF @ 20 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs60mOhm @ 4.2A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Pinout and package

SOT23 (Standard) Top View
SOT23 (Standard) Top View
Package: SOT23 (Standard)
PinNameFunctionSource
1Drain
2Gate
3Source

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.