SHINDENGEN(新电元)Japan
This diode is also a P-N junction element with better reverse recovery characteristics. It is perfectly suited for SMPSes in fields including home electronics as well as those for office appliance apparatuses, and factory automation apparatuses. K series：Low V F ML series：Low V F , Low trr, Soft Recovery Type US series：Ultra Fast, Soft Recovery Type A series：Ultra Fast, Low V F Type
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View full reportTechnical parameters
Key specs
Reverse voltage200 V
Average rectified current3 A
| Power | |
|---|---|
| Average forward current | 3 |
| Forward voltage | 0.98 |
| Repetitive peak reverse voltage | 200 |
| Reverse current | 10 |
| Surge forward current | 45 |
| Environment and package | |
| Junction temperature | -40 to 150 |
| Package (House Name) | TO-252(Dpak) |
| Package (JEDEC Code) | TO-252 |
| Storage temperrature | -40 to 150 |
| Thermal resistance | 6 |
| Other | |
| As | Not identified |
| Br | Not identified |
| Conditions | Junction to case |
| Ctrl Number | EA31FS2-F_Rev.01(2026.03) |
| I F (AV) | 3A |
| I FSM | 45A |
| Ni | Not identified |
| Pb | Not identified |
| Reverse recovery time | 30 |
| Rp | Not identified |
| Sb | Not identified |
| Series | TE |
| V F (max.) | 0.98V |
| V RRM | 200V |