Vishay General Semiconductor - Diodes DivisionUnited States

EGP50B-E3/73

Single Diodes

DIODE GEN PURP 100V 5A GP20

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Technical parameters

Key specs

Reverse voltage100 V
Average rectified current5 A
Forward voltage950 mVMax · 5 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
Power
Current - Average Rectified (Io)5A
Current - Reverse Leakage @ Vr5 µA @ 100 V
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 5 A
Environment and package
Mounting TypeThrough Hole
Operating Temperature - Junction-65°C ~ 150°C
Package / CaseDO-201AA, DO-27, Axial
Supplier Device PackageGP20
Other
Base Product NumberEGP50
Capacitance @ Vr, F95pF @ 4V, 1MHz
MfrVishay General Semiconductor - Diodes Division
PackagingTape & Box (TB)
Part StatusObsolete
Reverse Recovery Time (trr)50 ns
SeriesSUPERECTIFIER®
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

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