Vishay General Semiconductor - Diodes DivisionUnited States
DIODE GEN PURP 100V 5A GP20
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Technical parameters
Key specs
Reverse voltage100 V
Average rectified current5 A
Forward voltage950 mVMax · 5 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 5A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 5 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C~150°C |
| Package | Tape & Box (TB) |
| Package / Case | DO-201AA, DO-27, Axial |
| Supplier Device Package | GP20 |
| Other | |
| Base Product Number | EGP50 |
| Capacitance @ Vr, F | 95pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 50 ns |
| Series | SUPERECTIFIER® |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |