Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 600V 1A DO214AC
All alternatives
View full report84 alternatives on file, including 12 Chinese alternatives. Sign in to view them.
Technical parameters
Key specs
Reverse voltage600 V
Average rectified current1 A
Forward voltage1.7 VMax · 1 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Other | |
| Base Product Number | ES1J |
| Capacitance @ Vr, F | 18pF @ 1V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Documents
No documents are linked to this part yet.