VBsemi(微碧半导体)China
F3055L TO252-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,60V；18A；RDS(ON)=73mΩ@VGS=10V,VGS=20V；Vth=1~3V；
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current18.2 A
On-resistance73 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 18.2A |
| Other | |
| 导通电阻(RDS(on)) | 73mΩ@10V,18.2A |
| 数量 | 1个N沟道 |