onsemiUnited States
IGBT MODULE 650V 33A 135W
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 33 A |
| Power - Max | 135 W |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Other | |
| Base Product Number | FAM65 |
| Configuration | Half Bridge Inverter |
| IGBT Type | - |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 4.86 nF @ 400 V |
| Mfr | onsemi |
| NTC Thermistor | No |
| Product Status | Active |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | - |