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Technical parameters

。Current consumption | V=±15V <25 | mA
eLinearity | <1 | %FS
fFrequency bandwidth(-3dB) | DC~20 | kHz
IpMeasuring range ofprimary current | 0~±100 | 0~±200 | 0~±400 | 0~±600 | 0~±800 | 0~±1000 | A
lpPrimary nominal input current | 50 | 100 | 200 | 300 | 400 | 500 | A
mQuality (approx) | 68 | g
RLoad resistance | ≥10K | Q
TAAmbient operating temperature | -40~+85 | ℃
TrResponse time | ≤7 | μ s
TsAmbient storage temperature | -40~+100 | ℃
VInsulation voltage | 3kV RMS /50Hz/1 min between primary and secondary side circuits
V₀Offset voltage | TA=25℃ <±25 | mV
VoSupply voltage | ±12~±15(±5%) | V
VorThermal drift of V0 | Ip=0 TA=-25~+85℃ <±1 | mV/℃
VourNominal output voltage | 4±1% | V
VowResidual voltage | Ip→0 <±25 | mV

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