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Technical parameters

BW工作频宽 -3dB CL= 1nF 25℃Bandwidth | DC ~ 120 | KHz
CH1CH2 | CH1 | CH2
di/dt电流跟随速度 accuratelyfollo wed | >100 | A/us
Ɛ L线性度 ²Linearity | @I p N ,T=25℃ <±0.5 | %
FS20DKT5/50020 | 500 | 20 | 500
FS20DKT5/60020 | 600 | 20 | 600
FS30DKT5/15030 | -350/150 | 30 | -350/150
FS30DKT5/35030 | 350 | 30 | 350
FS60DKT5/60060 | 600 | 60 | 600
FS75DKT5/50075 | 500 | 75 | 500
Icc电流消耗 Current consumption | @I p N <15 | mA
m产品重量 Mass ( approx ) | ≈ 100 | g
Ris绝缘阻抗 Galvanicisolation | @500V DC >1000 | M Ω
R L负载电阻 Load resistance | ≥4.7 | K Ω
Rou T输出电阻 0utput internaresista nce | 9 | Ω
T A工作温度 0perating temperature | -40 ~ +125 | ℃
TCV OE偏移电压温漂 Vo E Temperature variation of Vo E | @-40℃~ 125℃ ≤±0.5 | mV/℃
TCV OUT输出电压温漂 Temperature variation of Vou T | @-40℃~ 125℃ ≤±0.5 | mV/℃
Tr响应时间 Response time | @90%I PN <5 | us
Ts储存温度 Storage temperature | -45 ~ +125 | ℃
Vcc电源电压 ¹Supply voltage | @DC +5V ±5% | V
V d绝缘电压 Galvanicisolation | @50HZ, 1min 3.0 | KV
Vo E零点失调电压 Vo E Zero offsetvolta ge | @I p=0,T=25 ℃ 1/2Vcc±0. 01 | V
Vo M磁滞电压 Magnetic offsetv oltage | @I p N →0,T=25℃ ≤±10 | mV
Vou T额定输出电压 Rated output voltage | @RL=4.7K/25 ℃ 1/2Vcc±2 | V
X G精度 Accuracy | @I p N ,T=25℃ <±1 | %

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