Goford SemiconductorTaiwan, China
MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | DFN5*6-8L |
| Other | |
| Compliance | RoHS,Halogen Free |
| ESD Diode | NO |
| Id (A) | 55 |
| Pd (W) | 60 |
| Rds(on) mΩ(max) @Vgs=10V | 17 |
| Rds(on) mΩ(max) @Vgs=4.5V | 21 |
| Rds(on) mΩ(typ) @Vgs=10V | 14 |
| Rds(on) mΩ(typ) @Vgs=4.5V | 17 |
| Type | N |
| Vds (V) | 60 |
| Vgs(th) max(V) | 2.4 |
| Vgs (V) | ±20 |