Goford SemiconductorTaiwan, China
MOSFET
All alternatives
View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | DFN3*3-8L |
| Other | |
| Ciss (pF) | 479 |
| Compliance | Automotive,RoHS,Halogen Free |
| Crss (pF) | 31 |
| ESD Diode | NO |
| Id (A) | 6 |
| Pd (W) | 1.25 |
| Qgd (nC) | 2 |
| Qg (nC) | 10 |
| Qgs (nC) | 1.6 |
| Rds(on) mΩ(max) @Vgs=10V | 30 |
| Rds(on) mΩ(max) @Vgs=4.5V | 40 |
| Rds(on) mΩ(typ) @Vgs=10V | 25 |
| Rds(on) mΩ(typ) @Vgs=4.5V | 33 |
| Technology | TRENCH |
| Type | N |
| Vds (V) | 40 |
| Vgs(th) max(V) | 2.5 |
| Vgs (V) | ±20 |