Goford SemiconductorTaiwan, China
G300N04S2
Transistors - FETs, MOSFETs - Single类型：N+N沟道 漏源电压(Vdss)：40V 连续漏极电流(Id)：5.5A 阈值电压(Vgs(th))：2.5V 导通电阻(RDS(on)@Vgs：23mΩ@10V 32mΩ@4.5V 封装：SOP-8 Dual
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View full reportTechnical parameters
Key specs
Drain-source voltage40 V
Continuous drain current5.5 A
On-resistance40 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 40V |
| 连续漏极电流(Id) | 5.5A |
| Other | |
| 导通电阻(RDS(on)) | 40mΩ@4.5V |
| 耗散功率(Pd) | 1.25W |