晶导微电子China
G60R068TP1 — 山东晶导微 MOSFET
All alternatives
View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-263-2L |
| Other | |
| Ciss(pF) | 3890 |
| Coss(pF) | 196 |
| Crss(pF) | 7.3 |
| ID(A) | 55 |
| Polarity | N |
| Rdson_Max(mΩ) | 68 |
| Rdson_Typ(mΩ) | 60 |
| Tech | SJ-Trench |
| VDSS(V) | 600 |
| @VGS/ID (V)/(A) | 10/27 |
| VGSS(V) | ±30 |
| VGSth_Max(V) | 5 |
| VGSth_Min(V) | 3 |