GeneSiC SemiconductorUnited States
TRANS SJT 1200V 10A TO247AB
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Technical parameters
Key specs
Drain-source voltage1.2 kV
Continuous drain current10 A
On-resistance140 mΩMax · 10A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Power Dissipation (Max) | 170W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C(TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB |
| Other | |
| FET Feature | - |
| FET Type | - |
| Mfr | GeneSiC Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 10A |
| Series | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | - |
| Vgs(th) (Max) @ Id | - |