GeneSiC SemiconductorUnited States
IGBT 1200V SOT247
All alternatives
View full report8 alternatives on file, including 1 Chinese alternatives. Sign in to view them.
Technical parameters
| Power | |
|---|---|
| Current - Collector Pulsed (Icm) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB |
| Other | |
| Gate Charge | 50 nC |
| IGBT Type | PT |
| Input Type | Standard |
| Mfr | GeneSiC Semiconductor |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 36 ns |
| Series | - |
| Switching Energy | 2.66mJ (on), 4.35mJ (off) |
| Td (on/off) @ 25°C | - |
| Test Condition | 800V, 35A, 22Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 35A |