GeneSiC SemiconductorUnited States
BRIDGE RECT 1PHASE 800V 4A GBL
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Technical parameters
Key specs
Reverse voltage800 V
Average rectified current4 A
Forward voltage1 VMax · 2 A
TypeStandard
| Power | |
|---|---|
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 2 A |
| Voltage - Peak Reverse (Max) | 800 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | 4-SIP, GBL |
| Supplier Device Package | GBL |
| Other | |
| Diode Type | Single Phase |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Technology | Standard |
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